The Germanium Planar FET-A New Device for Radio Applications

Owing to the presence of multiple gates, FinFETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology and thus enable continued transistor scaling. The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together.It is the primary process by which silicon integrated circuit chips are built. The process utilizes the surface passivation and thermal oxidation methods. The planar process was developed at Fairchild Semiconductor in.

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DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15, no. 2, pp. 183-189, (1967 April.). doi: DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15 Issue 2 pp. 183-189, (1967 April.). doi:
Abstract: Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

@article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},} @article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},
abstract={recently developed germanium planar junction field-effect transistors are described, with emphasis on vhf characteristics. broadcast-band fm tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and agc characteristics. practical circuits are presented.},}

TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967 TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967
AB - Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

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Planar Fet 1